pulse transistor

The thesis analyses the principles and characteristics of the pulse generator composing from avalanche transistor and step recovery diode ( SRD), the analysis provide the necessary theoretic bases for design and realization nanosecond and sub-nanosecond pulse circuit.

论文分析了由雪崩晶体管组成的窄脉冲发生电路和阶跃二极管组成的脉冲整形电路的原理与特性。为纳秒和亚纳秒级脉冲电路的设计与实现提供了必要的理论依据。

The Design and Application of the Avalanche Transistor High Speed Pulse Circuit

雪崩晶体管高速脉冲电路设计及其应用

The system adopted insulated gate bipolar transistor ( IGBT) as its main circuit and pulse-width modulating ( PWM) technology.

该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。

The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor) etc. as substitute for hydrogen thyratrons.

用IGBT（绝缘栅双极性晶体管）和功率MOSFET（金属氧化物半导体场效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。

The transistor pulse generator power supply is now commonly employed as a UEDM power supplier.

晶体管脉冲发生器电源共同地现在被使用如同UEDM力量供应商.